Sunbeam Electronics (Hong Kong) Limited

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IPD90R1K2C3 High Power MOSFET , AMPAK Wifi Module N-CH 900V 5.1A 3 Pin DPAK T/R

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Sunbeam Electronics (Hong Kong) Limited
City:shenzhen
Country/Region:china
Contact Person:MrLarry Fan
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IPD90R1K2C3 High Power MOSFET , AMPAK Wifi Module N-CH 900V 5.1A 3 Pin DPAK T/R

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Brand Name :Infineon
Model Number :IPD90R1K2C3
Place of Origin :CHINA
MPN :IPD90R1K2C3
MFR :Infineon
Category :Mosfet
Size :2.41*6.73*6.22mm
MOQ :package qty
Price :contact sales for updated price
Packaging Details :tape and reel
Delivery Time :2 weeks
Payment Terms :T/T
Supply Ability :1000+
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IPD90R1K2C3 Infineon Trans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) DPAK T/R

Product Technical Specifications

EU RoHS Compliant with Exemption
ECCN (US) EAR99
Part Status Active
SVHC Yes
SVHC Exceeds Threshold Yes
Automotive No
PPAP No
Product Category Power MOSFET
Configuration Single
Process Technology CoolMOS
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 900
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 3.5
Operating Junction Temperature (°C) -55 to 150
Maximum Continuous Drain Current (A) 5.1
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (MOhm) 1200@10V
Typical Gate Charge @ Vgs (nC) 28@10V
Typical Gate Charge @ 10V (nC) 28
Typical Input Capacitance @ Vds (pF) 710@100V
Maximum Power Dissipation (mW) 83000
Typical Fall Time (ns) 40
Typical Rise Time (ns) 20
Typical Turn-Off Delay Time (ns) 400
Typical Turn-On Delay Time (ns) 70
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Maximum Positive Gate Source Voltage (V) 20
Maximum Diode Forward Voltage (V) 1.2
Pin Count 3
Standard Package Name TO-252
Supplier Package DPAK
Mounting Surface Mount
Package Height 2.41(Max)
Package Length 6.73(Max)
Package Width 6.22(Max)
PCB changed 2
Tab Tab
Lead Shape Gull-wing
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