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EU RoHS | Compliant with Exemption |
ECCN (US) | EAR99 |
Part Status | Active |
Automotive | No |
PPAP | No |
Product Category | Power MOSFET |
Material | Si |
Configuration | Single |
Process Technology | HEXFET |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 150 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Continuous Drain Current (A) | 104 |
Maximum Drain Source Resistance (MOhm) | 11@10V |
Typical Gate Charge @ Vgs (nC) | 77@10V |
Typical Gate Charge @ 10V (nC) | 77 |
Typical Input Capacitance @ Vds (pF) | 5270@50V |
Maximum Power Dissipation (mW) | 380000 |
Typical Fall Time (ns) | 39 |
Typical Rise Time (ns) | 73 |
Typical Turn-Off Delay Time (ns) | 41 |
Typical Turn-On Delay Time (ns) | 18 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 175 |
Packaging | Tube |
Pin Count | 3 |
Standard Package Name | TO-220 |
Supplier Package | TO-220AB |
Mounting | Through Hole |
Package Height | 9.02(Max) |
Package Length | 10.67(Max) |
Package Width | 4.83(Max) |
PCB changed | 3 |
Tab | Tab |
Lead Shape | Through Hole |