Sunbeam Electronics (Hong Kong) Limited

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IRFH9310TRPBF High Power MOSFET P-CH Si 30V 21A 8 Pin PQFN EP T/R

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Sunbeam Electronics (Hong Kong) Limited
City:shenzhen
Country/Region:china
Contact Person:MrLarry Fan
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IRFH9310TRPBF High Power MOSFET P-CH Si 30V 21A 8 Pin PQFN EP T/R

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Brand Name :Infineon
Model Number :IRFH9310TRPBF
Place of Origin :CHINA
MPN :IRFH9310TRPBF
MFR :Infineon
Category :Mosfet
Size :5*6*0.95mm
MOQ :package qty
Price :contact sales for updated price
Packaging Details :tape and reel
Delivery Time :2 weeks
Payment Terms :T/T
Supply Ability :1000+
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IRFH9310TRPBF Infineon Trans MOSFET P-CH Si 30V 21A 8-Pin PQFN EP T/R

Product Technical Specifications

EU RoHS Compliant
ECCN (US) EAR99
Part Status Active
Automotive No
PPAP No
Product Category Power MOSFET
Material Si
Configuration Single Quad Drain Triple Source
Process Technology HEXFET
Channel Mode Enhancement
Channel Type P
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 30
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 21
Maximum Drain Source Resistance (MOhm) 4.6@10V
Typical Gate Charge @ Vgs (nC) 58@4.5V|110@10V
Typical Gate Charge @ 10V (nC) 110
Typical Input Capacitance @ Vds (pF) 5250@15V
Maximum Power Dissipation (mW) 3100
Typical Fall Time (ns) 70
Typical Rise Time (ns) 47
Typical Turn-Off Delay Time (ns) 65
Typical Turn-On Delay Time (ns) 25
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Pin Count 8
Standard Package Name QFN
Supplier Package PQFN EP
Mounting Surface Mount
Package Height 0.95(Max)
Package Length 5
Package Width 6
PCB changed 8
Lead Shape No Lead
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