
Add to Cart
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
Automotive | No |
PPAP | No |
Product Category | Power MOSFET |
Material | Si |
Configuration | Single Quad Drain Triple Source |
Process Technology | HEXFET |
Channel Mode | Enhancement |
Channel Type | P |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Continuous Drain Current (A) | 21 |
Maximum Drain Source Resistance (MOhm) | 4.6@10V |
Typical Gate Charge @ Vgs (nC) | 58@4.5V|110@10V |
Typical Gate Charge @ 10V (nC) | 110 |
Typical Input Capacitance @ Vds (pF) | 5250@15V |
Maximum Power Dissipation (mW) | 3100 |
Typical Fall Time (ns) | 70 |
Typical Rise Time (ns) | 47 |
Typical Turn-Off Delay Time (ns) | 65 |
Typical Turn-On Delay Time (ns) | 25 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Pin Count | 8 |
Standard Package Name | QFN |
Supplier Package | PQFN EP |
Mounting | Surface Mount |
Package Height | 0.95(Max) |
Package Length | 5 |
Package Width | 6 |
PCB changed | 8 |
Lead Shape | No Lead |